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| SK25GB063 Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITOP(R) 1 IGBT Module Inverse Diode Freewheeling Diode SK25GB063 SK25GAL063 SK25GAR063 Preliminary Data Module Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications GB GAL GAR 1 05-04-2007 SCT (c) by SEMIKRON SK25GB063 Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITOP(R) 1 IGBT Module SK25GB063 SK25GAL063 SK25GAR063 Preliminary Data Freewheeling Diode Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Typical Applications GB GAL GAR 2 05-04-2007 SCT (c) by SEMIKRON SK25GB063 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 05-04-2007 SCT (c) by SEMIKRON SK25GB063 Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic FWD and APD forward characteristic 4 05-04-2007 SCT (c) by SEMIKRON SK25GB063 UL recognized file no. E 63 532 5 05-04-2007 SCT (c) by SEMIKRON |
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